TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

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dc.contributor.authorShim, Gi Woongko
dc.contributor.authorHong, Woonggiko
dc.contributor.authorCha, Jun-Hweko
dc.contributor.authorPark, Jung Hwanko
dc.contributor.authorLee, Keon Jaeko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2020-12-10T08:50:13Z-
dc.date.available2020-12-10T08:50:13Z-
dc.date.created2020-01-20-
dc.date.issued2020-09-
dc.identifier.citationADVANCED MATERIALS, v.32, no.35, pp.1907133-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10203/278144-
dc.description.abstractAs the need for super-high-resolution displays with various form factors has increased, it has become necessary to produce high-performance thin-film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a-Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light-emitting diode displays, and also to overcome the performance and reliability issues of a-Si:H, low-temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a-Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next-generation channel materials is discussed.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleTFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides-
dc.typeArticle-
dc.identifier.wosid000563522000001-
dc.identifier.scopusid2-s2.0-85081749818-
dc.type.rimsART-
dc.citation.volume32-
dc.citation.issue35-
dc.citation.beginningpage1907133-
dc.citation.publicationnameADVANCED MATERIALS-
dc.identifier.doi10.1002/adma.201907166-
dc.contributor.localauthorLee, Keon Jae-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorPark, Jung Hwan-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcontact resistance-
dc.subject.keywordAuthordevice structures-
dc.subject.keywordAuthordisplay technologies-
dc.subject.keywordAuthorthin film transistors-
dc.subject.keywordAuthortransition metal dichalcogenides-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusMOLYBDENUM-DISULFIDE-
dc.subject.keywordPlusOXIDE SEMICONDUCTOR-
dc.subject.keywordPlusINSTABILITY MECHANISMS-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusCARRIER TRANSPORT-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusWAFER-SCALE-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusHIGH-MOBILITY-
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