Provided is a memory- and logic device-integrated soft electronic system, the memory- and logic device-integrated soft electronic system including: a substrate 100; a plurality of bar-shaped first electrodes 110 stacked on the substrate; a resistance-variable material layer 120 coated on the lower electrode; and a plurality of bar-shaped second electrodes 130 stacked on the resistance-variable material layer 120, wherein the first electrode and the second electrode cross each other.