A 0.0082-mm², 192-nW Single BJT Branch Bandgap Reference in 0.18-μm CMOS

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In this letter, we propose a bandgap reference (BGR) with a single BJT branch and a PTAT-embedded amplifier with a cascode Miller frequency compensation. As implemented in 0.18-μm CMOS, the proposed BGR occupies a small area of 0.0082 mm2 and low power consumption of 192 nW while achieving voltage spread (σ/μ) of 0.33% and temperature coefficient of 26.3 ppm/°C over -40 °C~140 °C, without any trimming.
Publisher
IEEEIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2020-09
Language
English
Article Type
Article
Citation

IEEE SOLID-STATE CIRCUITS LETTERS, v.3, pp.426 - 429

ISSN
2573-9603
DOI
10.1109/LSSC.2020.3025226
URI
http://hdl.handle.net/10203/277658
Appears in Collection
EE-Journal Papers(저널논문)
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