Faraday cage angled-etching of nanostructures in bulk dielectrics

Cited 30 time in webofscience Cited 22 time in scopus
  • Hit : 313
  • Download : 312
For many emerging optoelectronic materials, heteroepitaxial growth techniques do not offer the same high material quality afforded by bulk, single-crystal growth. However, the need for optical, electrical, or mechanical isolation at the nanoscale level often necessitates the use of a dissimilar substrate, upon which the active device layer stands. Faraday cage angled-etching (FCAE) obviates the need for these planar, thin-film technologies by enabling in situ device release and isolation through an angled-etching process. By placing a Faraday cage around the sample during inductively coupled plasma reactive ion etching, the etching plasma develops an equipotential at the cage surface, directing ions normal to its face. In this article, the effects that Faraday cage angle, mesh size, and sample placement have on etch angle, uniformity, and mask selectivity are investigated within a silicon etching platform. Simulation results qualitatively confirm experiments and help to clarify the physical mechanisms at work. These results will help guide FCAE process design across a wide range of material platforms.
Publisher
A V S AMER INST PHYSICS
Issue Date
2016-07
Language
English
Article Type
Article
Citation

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.34, no.4

ISSN
1071-1023
DOI
10.1116/1.4944854
URI
http://hdl.handle.net/10203/277542
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
000382207700053.pdf(2.91 MB)Download
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 30 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0