Strain engineering of the silicon-vacancy center in diamond

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We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.
Publisher
AMER PHYSICAL SOC
Issue Date
2018-05
Language
English
Article Type
Article
Citation

PHYSICAL REVIEW B, v.97, no.20

ISSN
2469-9950
DOI
10.1103/PhysRevB.97.205444
URI
http://hdl.handle.net/10203/277539
Appears in Collection
EE-Journal Papers(저널논문)
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