DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Hyun Joon | ko |
dc.contributor.author | Lim, Younghwan | ko |
dc.contributor.author | Choi, Byeong-Uk | ko |
dc.contributor.author | Bin, Hyung | ko |
dc.contributor.author | Jung, WooChul | ko |
dc.contributor.author | Ryu, Sangwoo | ko |
dc.contributor.author | Oh, Jihun | ko |
dc.contributor.author | Chung, Sung-Yoon | ko |
dc.date.accessioned | 2020-11-16T02:55:44Z | - |
dc.date.available | 2020-11-16T02:55:44Z | - |
dc.date.created | 2020-11-03 | - |
dc.date.created | 2020-11-03 | - |
dc.date.issued | 2020-09 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.12, no.39, pp.43720 - 43727 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/277293 | - |
dc.description.abstract | Cu-based p-type semiconducting oxides have been sought for water-reduction photocathodes to enhance the energy-conversion efficiency in photoelectrochemical cells. CuBi2O4 has recently attracted notable attention as a new family of p-type oxides, based on its adequate band gap. Although the identification of a major defect structure should be the first step toward understanding the electronic conduction behavior, no direct experimental analysis has been carried out yet. Using atomic-scale scanning transmission electron microscopy together with chemical probing, we identify a substantial amount of Bi-Cu-Cu-Bi antisite intermixing as a major point-defect type. Our density functional theory calculations also show that antisite Bi-Cu can seriously hinder the hole-polaron hopping between Cu, in agreement with lower conductivity and a larger thermal activation barrier under a higher degree of intermixing. These findings highlight the value of the direct identification of point defects for a better understanding of electronic properties in complex oxides. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Direct Identification of Antisite Cation Intermixing and Correlation with Electronic Conduction in CuBi2O4 for Photocathodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000577111700038 | - |
dc.identifier.scopusid | 2-s2.0-85092681053 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 39 | - |
dc.citation.beginningpage | 43720 | - |
dc.citation.endingpage | 43727 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.0c12491 | - |
dc.contributor.localauthor | Jung, WooChul | - |
dc.contributor.localauthor | Oh, Jihun | - |
dc.contributor.localauthor | Chung, Sung-Yoon | - |
dc.contributor.nonIdAuthor | Jung, Hyun Joon | - |
dc.contributor.nonIdAuthor | Lim, Younghwan | - |
dc.contributor.nonIdAuthor | Bin, Hyung | - |
dc.contributor.nonIdAuthor | Ryu, Sangwoo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | antisite defects | - |
dc.subject.keywordAuthor | copper oxides | - |
dc.subject.keywordAuthor | EDS | - |
dc.subject.keywordAuthor | photocathodes | - |
dc.subject.keywordAuthor | p-type oxides | - |
dc.subject.keywordAuthor | polaron hopping | - |
dc.subject.keywordAuthor | STEM | - |
dc.subject.keywordPlus | CHARGE SEPARATION | - |
dc.subject.keywordPlus | WATER | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordPlus | DEFECTS | - |
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