Direct Identification of Antisite Cation Intermixing and Correlation with Electronic Conduction in CuBi2O4 for Photocathodes

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dc.contributor.authorJung, Hyun Joonko
dc.contributor.authorLim, Younghwanko
dc.contributor.authorChoi, Byeong-Ukko
dc.contributor.authorBin, Hyungko
dc.contributor.authorJung, WooChulko
dc.contributor.authorRyu, Sangwooko
dc.contributor.authorOh, Jihunko
dc.contributor.authorChung, Sung-Yoonko
dc.date.accessioned2020-11-16T02:55:44Z-
dc.date.available2020-11-16T02:55:44Z-
dc.date.created2020-11-03-
dc.date.created2020-11-03-
dc.date.issued2020-09-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, v.12, no.39, pp.43720 - 43727-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10203/277293-
dc.description.abstractCu-based p-type semiconducting oxides have been sought for water-reduction photocathodes to enhance the energy-conversion efficiency in photoelectrochemical cells. CuBi2O4 has recently attracted notable attention as a new family of p-type oxides, based on its adequate band gap. Although the identification of a major defect structure should be the first step toward understanding the electronic conduction behavior, no direct experimental analysis has been carried out yet. Using atomic-scale scanning transmission electron microscopy together with chemical probing, we identify a substantial amount of Bi-Cu-Cu-Bi antisite intermixing as a major point-defect type. Our density functional theory calculations also show that antisite Bi-Cu can seriously hinder the hole-polaron hopping between Cu, in agreement with lower conductivity and a larger thermal activation barrier under a higher degree of intermixing. These findings highlight the value of the direct identification of point defects for a better understanding of electronic properties in complex oxides.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleDirect Identification of Antisite Cation Intermixing and Correlation with Electronic Conduction in CuBi2O4 for Photocathodes-
dc.typeArticle-
dc.identifier.wosid000577111700038-
dc.identifier.scopusid2-s2.0-85092681053-
dc.type.rimsART-
dc.citation.volume12-
dc.citation.issue39-
dc.citation.beginningpage43720-
dc.citation.endingpage43727-
dc.citation.publicationnameACS APPLIED MATERIALS & INTERFACES-
dc.identifier.doi10.1021/acsami.0c12491-
dc.contributor.localauthorJung, WooChul-
dc.contributor.localauthorOh, Jihun-
dc.contributor.localauthorChung, Sung-Yoon-
dc.contributor.nonIdAuthorJung, Hyun Joon-
dc.contributor.nonIdAuthorLim, Younghwan-
dc.contributor.nonIdAuthorBin, Hyung-
dc.contributor.nonIdAuthorRyu, Sangwoo-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorantisite defects-
dc.subject.keywordAuthorcopper oxides-
dc.subject.keywordAuthorEDS-
dc.subject.keywordAuthorphotocathodes-
dc.subject.keywordAuthorp-type oxides-
dc.subject.keywordAuthorpolaron hopping-
dc.subject.keywordAuthorSTEM-
dc.subject.keywordPlusCHARGE SEPARATION-
dc.subject.keywordPlusWATER-
dc.subject.keywordPlusEVOLUTION-
dc.subject.keywordPlusDEFECTS-
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