Radiation-tolerant unit MOSFET hardened against single event effect and total ionization dose effect단일 사건 현상과 누적 이온화 현상에 강인한 내방사선 입체 단위 모스펫
Provided is a radiation-tolerant 3D unit MOSFET having at least one selected from a dummy drain (DD), an N-well layer (NW), a deep N-well layer (DNW), and a P+ layer to minimize an influence by a total ionization dose effect and an influence by a single event effect.
- Assignee
- KAIST
- Country
- US (United States)
- Application Date
- 2018-11-14
- Application Number
- 16191250
- Registration Date
- 2020-08-25
- Registration Number
- 10756167
- Appears in Collection
- EE-Patent(특허)
- Files in This Item
- There are no files associated with this item.
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