Radiation-tolerant unit MOSFET hardened against single event effect and total ionizing dose effect단일 사건 현상과 누적 이온화 현상에 강이한 내방사선 단위 모스펫

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Provided is a radiation-tolerant unit MOSFET to block a leakage current path caused by a total ionizing dose effect and reduce influence of a current pulse generated due to a single event effect. The radiation-tolerant unit MOSFET includes a poly gate layer for designating a gate region and at least one dummy gate region, a source and a drain, and a P+ layer and a P-active layer for specifying a P+ region to the source and the drain, and a dummy drain allowing application of a voltage. An electronic part that may normally operate is provided even a radiation environment where particle radiation and electromagnetic radiation are present.
Assignee
KAIST
Country
US (United States)
Application Date
2018-09-06
Application Number
16123930
Registration Date
2020-08-25
Registration Number
10756028
URI
http://hdl.handle.net/10203/276560
Appears in Collection
EE-Patent(특허)
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