Flexible Bottom-Gated Organic Field-Effect Transistors Utilizing Stamped Polymer Layers from the Surface of Water

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 35
  • Download : 0
The facile sequential deposition of functional organic thin films by solution processes is critical for the development of a variety of high-performance organic devices without restriction in terms of materials and processes. Herein, we propose a simple fabrication process that entails stacking multiple layers of functional polymers to fabricate organic field-effect transistors (OFETs). The process involves stamping organic semiconducting layers formed on the surface of water onto a commonly used polymeric dielectric layer. Our scheme makes it possible to independently optimize organic semiconductor films by controlling the solvent evaporation time during the process of film formation on the surface of water. This approach eliminates the need to be concerned about any interference with adjacent layers. Utilizing this process, the fabrication of high-performance bottom-gated OFETs is demonstrated on a glass and a flexible substrate. The OFETs consist of a vertically stacked diketopyrrolopyrrole-based polymer semiconducting layer on the poly(methyl methacrylate) film with a maximum hole mobility of 0.85 cm(2)/V s.
Publisher
AMER CHEMICAL SOC
Issue Date
2020-06
Language
English
Article Type
Article
Citation

ACS APPLIED MATERIALS & INTERFACES, v.12, no.22, pp.25092 - 25099

ISSN
1944-8244
DOI
10.1021/acsami.0c03612
URI
http://hdl.handle.net/10203/275397
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0