Simulation Study of a Monolithic III-V/Si V-Groove Carrier Depletion Optical Phase Shifter

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 49
  • Download : 0
In this paper, we propose a new carrier depletion-type hybrid III-V/Si optical phase shifter using a n-III-V/p-Si hetero-junction, which can be fabricated with direct epitaxial growth of III-V semiconductors on Si. We numerically analyzed the performance of the III-V/Si hybrid optical phase shifter by comparing the performance in reverse bias operation with that of pure Si or III-V p-n optical phase shifters. The hybrid III-V/Si optical phase shifter showed improved modulation efficiency and lower optical loss compared to pure Si and III-V p-n optical phase shifters, owing to the large electron-induced refractive index change of III-V compound semiconductors, while avoiding the large hole-induced optical loss of III-V compound semiconductor. The simulation study suggests the feasibility of a very low voltage-length product (V-pi L) of 0.07 V . cm, a low insertion loss (alpha) of 16 dB/cm, and a very low alpha V-pi L product close to 1 V . dB at 1.31 mu m, which is 10x lower than for Si p-n optical phase shifters.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2020-04
Language
English
Article Type
Article
Citation

IEEE JOURNAL OF QUANTUM ELECTRONICS, v.56, no.2

ISSN
0018-9197
DOI
10.1109/JQE.2020.2971764
URI
http://hdl.handle.net/10203/274114
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0