A K-u-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 322
  • Download : 58
This paper presents a Ku-band RF receiver front-end with broadband impedance matching and amplification. The major building blocks of the proposed receiver front-end include a wideband low-noise amplifier (LNA) employing a cascade of resistive feedback inverter (RFI) and transformer-loaded common source amplifier, a down-conversion mixer with push-pull transconductor and complementary LO switching stage, and an output buffer. Push-pull architecture is employed extensively to maximize the power efficiency, bandwidth, and linearity. The proposed two-stage LNA employs the stagger-tuned frequency response in order to extend the RF bandwidth coverage. The input impedance of RFI is carefully analyzed, and a wideband input matching circuit incorporating only a single inductor is presented along with useful equivalent impedance matching models and detailed design analysis. The prototype chip was fabricated in 45-nm CMOS technology and dissipates 78 mW from a 1.2-V supply while occupying chip area of 0.29 mm(2). The proposed receiver front-end provides 21 dB conversion gain with 7 GHz IF bandwidth, 3.5 dB NF, -15.7 dBm IIP3 while satisfying <-10 dB input matching over the whole input band.
Publisher
MDPI
Issue Date
2020-03
Language
English
Article Type
Article
Citation

ELECTRONICS, v.9, no.3

ISSN
2079-9292
DOI
10.3390/electronics9030539
URI
http://hdl.handle.net/10203/274042
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
000524079100160.pdf(6.07 MB)Download

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0