Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors

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In this letter, we propose the photo-responsible synaptic devices by using stackable GaAs photodetectors (PDs) and Ge-on-insulator (Ge-OI) synaptic transistors for the future three-dimensional (3D) artificial vision sensors. The photo-responsible synapse showed good photo-responding synaptic behaviors depending on the incident light to GaAs PD, which changes the hole injection into the Ge-OI transistors, resulting in the change in potentiation/depression characteristics. The training simulation highlighted the fabricated photo-responsible synapse can provide high colored pattern recognition tasks for semiconductor-based hardware systems.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2020-04
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.41, no.4, pp.605 - 608

ISSN
0741-3106
DOI
10.1109/LED.2020.2971321
URI
http://hdl.handle.net/10203/273928
Appears in Collection
EE-Journal Papers(저널논문)
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