Nickel (II) oxide (NiOx) is the p-type semiconductor material which has wide-bandgap (∼3.7 eV). Excellent material properties of NiOx make it possible to use NiOx as hole injection layer (HIL) for many optoelectronic devices. In this work, we introduce charge transfer doing in NiOx by MoO3 nanoparticles blending.