Thermal diffusion barrier metallization based on Co-Mo powder-mixed composites for n-type skutterudite ((Mm,Sm)(y)Co4Sb12) thermoelectric devices

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dc.contributor.authorSong, Jinseopko
dc.contributor.authorKim, Yeongseonko
dc.contributor.authorCho, Byung Jinko
dc.contributor.authorYoo, Chung-Yulko
dc.contributor.authorYoon, Hanako
dc.contributor.authorPark, Sang Hyunko
dc.date.accessioned2020-01-21T02:20:05Z-
dc.date.available2020-01-21T02:20:05Z-
dc.date.created2020-01-21-
dc.date.created2020-01-21-
dc.date.created2020-01-21-
dc.date.created2020-01-21-
dc.date.issued2020-03-
dc.identifier.citationJOURNAL OF ALLOYS AND COMPOUNDS, v.818-
dc.identifier.issn0925-8388-
dc.identifier.urihttp://hdl.handle.net/10203/271614-
dc.description.abstractThe thermal stability of the interfaces between metal electrodes and thermoelectric (TE) materials is a significant factor for determining the reliability of intermediate temperature (300-800 degrees C) TE devices (TEDs). The interfacial cracks and elemental inter-diffusion cause power degradation of TEDs. To enhance TE device reliability, metallization layers should be inserted between electrodes and TE material. Metallization layers act as a diffusion barrier by suppressing elemental inter-diffusion and a stress damper by matching coefficient of thermal expansion (CTE). In this paper, we introduce a Co0.6Mo0.4 metallization layer for n-type skutterudite (SKD-N). The Co0.6Mo0.4 metallization layer inhibited the elemental inter-diffusion to less than similar to 10 mu m, and the electrical specific contact resistance (SCR) remained within the range of similar to 10(-6) Omega cm(2) after thermal aging, which shows that the Co0.6Mo0.4 metallization layer has excellent interface reliability compared to a Ti metallization layer. These results demonstrate that the Co0.6Mo0.4 composite is a promising candidate as a metallization layer for the fabrication of highly reliable TEDs. (C) 2019 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE SA-
dc.titleThermal diffusion barrier metallization based on Co-Mo powder-mixed composites for n-type skutterudite ((Mm,Sm)(y)Co4Sb12) thermoelectric devices-
dc.typeArticle-
dc.identifier.wosid000506166900130-
dc.identifier.scopusid2-s2.0-85075439453-
dc.type.rimsART-
dc.citation.volume818-
dc.citation.publicationnameJOURNAL OF ALLOYS AND COMPOUNDS-
dc.identifier.doi10.1016/j.jallcom.2019.152917-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorSong, Jinseop-
dc.contributor.nonIdAuthorYoo, Chung-Yul-
dc.contributor.nonIdAuthorYoon, Hana-
dc.contributor.nonIdAuthorPark, Sang Hyun-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorThermoelectric devices-
dc.subject.keywordAuthorSkutterudite-
dc.subject.keywordAuthorThermal stability-
dc.subject.keywordAuthorInter-diffusion-
dc.subject.keywordAuthorMetallization-
dc.subject.keywordAuthorSpecific contact resistivity-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusJOINTS-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusEVOLUTION-
dc.subject.keywordPlusEXPANSION-
dc.subject.keywordPlusFIGURE-
dc.subject.keywordPlusMERIT-
dc.subject.keywordPlusCOSB3-
dc.subject.keywordPlusZT-
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