DC Field | Value | Language |
---|---|---|
dc.contributor.author | Song, Jinseop | ko |
dc.contributor.author | Kim, Yeongseon | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Yoo, Chung-Yul | ko |
dc.contributor.author | Yoon, Hana | ko |
dc.contributor.author | Park, Sang Hyun | ko |
dc.date.accessioned | 2020-01-21T02:20:05Z | - |
dc.date.available | 2020-01-21T02:20:05Z | - |
dc.date.created | 2020-01-21 | - |
dc.date.created | 2020-01-21 | - |
dc.date.created | 2020-01-21 | - |
dc.date.created | 2020-01-21 | - |
dc.date.created | 2020-01-21 | - |
dc.date.issued | 2020-03 | - |
dc.identifier.citation | JOURNAL OF ALLOYS AND COMPOUNDS, v.818 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | http://hdl.handle.net/10203/271614 | - |
dc.description.abstract | The thermal stability of the interfaces between metal electrodes and thermoelectric (TE) materials is a significant factor for determining the reliability of intermediate temperature (300-800 degrees C) TE devices (TEDs). The interfacial cracks and elemental inter-diffusion cause power degradation of TEDs. To enhance TE device reliability, metallization layers should be inserted between electrodes and TE material. Metallization layers act as a diffusion barrier by suppressing elemental inter-diffusion and a stress damper by matching coefficient of thermal expansion (CTE). In this paper, we introduce a Co0.6Mo0.4 metallization layer for n-type skutterudite (SKD-N). The Co0.6Mo0.4 metallization layer inhibited the elemental inter-diffusion to less than similar to 10 mu m, and the electrical specific contact resistance (SCR) remained within the range of similar to 10(-6) Omega cm(2) after thermal aging, which shows that the Co0.6Mo0.4 metallization layer has excellent interface reliability compared to a Ti metallization layer. These results demonstrate that the Co0.6Mo0.4 composite is a promising candidate as a metallization layer for the fabrication of highly reliable TEDs. (C) 2019 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Thermal diffusion barrier metallization based on Co-Mo powder-mixed composites for n-type skutterudite ((Mm,Sm)(y)Co4Sb12) thermoelectric devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000506166900130 | - |
dc.identifier.scopusid | 2-s2.0-85075439453 | - |
dc.type.rims | ART | - |
dc.citation.volume | 818 | - |
dc.citation.publicationname | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.identifier.doi | 10.1016/j.jallcom.2019.152917 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Song, Jinseop | - |
dc.contributor.nonIdAuthor | Yoo, Chung-Yul | - |
dc.contributor.nonIdAuthor | Yoon, Hana | - |
dc.contributor.nonIdAuthor | Park, Sang Hyun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Thermoelectric devices | - |
dc.subject.keywordAuthor | Skutterudite | - |
dc.subject.keywordAuthor | Thermal stability | - |
dc.subject.keywordAuthor | Inter-diffusion | - |
dc.subject.keywordAuthor | Metallization | - |
dc.subject.keywordAuthor | Specific contact resistivity | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | JOINTS | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordPlus | EXPANSION | - |
dc.subject.keywordPlus | FIGURE | - |
dc.subject.keywordPlus | MERIT | - |
dc.subject.keywordPlus | COSB3 | - |
dc.subject.keywordPlus | ZT | - |
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