Preparation of a Dense Cu(In,Ga)Se2 Film From (In,Se)/(Cu,Ga) Stacked Precursor for CIGS Solar Cells

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The Cu(In,Ga)Se2 (CIGS) thin film obtained by two-step process (metal deposition and Se annealing) has a rough surface morphology and many voids at the CIGS/Mo interface. To solve the problem a precursor that contains Se was employer by depositing a (In,Se)/(Cu,Ga) stacked layer. We devised a two-step annealing (vacuum pre-annealing and Se annealing) for the precursor because direct annealing of the precursor in Se environment resulted in the small grains with unwanted demarcation between stacked layers. After vacuum pre-annealing up to 500°C the CIGS film consisted of CIGS phase and secondary phases including In4Se3, InSe, and Cu9(In,Ga)4. The secondary phases were completely converted to CIGS phase by a subsequent Se annealing. A void-free CIGS/Mo interface was obtained by the two-step annealing process. Especially, the CIGS film prepared by vacuum annealing 450°C and subsequent Se annealing 550°C showed a densely-packed grains with smooth surface, well-aligned bamboo grains on the top of the film, little voids in the film, and also little voids at the CIGS/Mo interface. The smooth surface enhanced the cell performance due to the increase of shunt resistance.
Publisher
한국태양광발전학회
Issue Date
2019-03
Language
English
Citation

Current Photovoltaic Research, v.7, no.1, pp.1 - 8

ISSN
2288-3274
DOI
10.21218/CPR.2019.7.1.001
URI
http://hdl.handle.net/10203/271402
Appears in Collection
MS-Journal Papers(저널논문)
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