Fabrication and characteristics of 0.2-mu m Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic HEMTs with wide-head T-shaped multifinger gates

Cited 3 time in webofscience Cited 0 time in scopus
  • Hit : 192
  • Download : 0
A passivated 0.2-mu m pseudomorphic HERIT (PHEMT) was fabricated by combining a wide-head T-shaped gate formed using the dose split method of electron beam lithography (DSM) and a multifinger-type structure with drain-airbridges for the interconnection of the drain electrodes. The extrinsic transconductance and the cutoff frequency of the PHEMT device were 490 mS/mm and 75 GHz, respectively. The lowest minimum noise figure, NFmin, of the PHEMT device was observed around 40% of the saturation drain current, I-dss, at 12 GHz and a drain-to-source voltage, V-ds, of 2 V. The device exhibited a NFmin as low as 0.38 dB with an associated gain of 10.5 dB at 12 GHz. This noise figure value is the lowest data ever reported for a PHEMT device with the same gate length and multifinger-type gate structure. This result corresponds to a drastic reduction of the gate resistance to 0.2 Omega due to the multifinger-type gate structure with a wide-head T-shaped gate.
Publisher
KOREAN PHYSICAL SOC
Issue Date
1996-03
Language
English
Article Type
Article
Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.29, no.2, pp.234 - 238

ISSN
0374-4884
URI
http://hdl.handle.net/10203/271012
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 3 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0