0.20 mu m pseudomorphic HEMT device fabricated by PSM and self-aligned head T-shaped gate techniques

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We propose a new optical lithographic technique to form 0.20 mu m length T-shaped gate for application to low noise high electron mobility transistor (HEMT). By using this technique, 0.20 mu m AlGaAs/InGaAs/GaAs pseudomorphic HEMT (PHEMT) was successfully fabricated. and the transconductance of 498 mS/mm and the cutoff frequency of 62.4 GHz were obtained, which are the best values ever reported for the HEMTs fabricated using optical lithography.
Publisher
KOREAN PHYSICAL SOC
Issue Date
1997-06
Language
English
Article Type
Article; Proceedings Paper
Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.S140 - S142

ISSN
0374-4884
URI
http://hdl.handle.net/10203/270994
Appears in Collection
EE-Journal Papers(저널논문)
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