Parallelized Single-Electron Pumps Based on Gate-Tunable Quantum Dots

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dc.contributor.authorGhee, Young-Seokko
dc.contributor.authorAhn, Ye-Hwanko
dc.contributor.authorRyu, Sungguenko
dc.contributor.authorSim, Heung-Sunko
dc.contributor.authorHong, Changkiko
dc.contributor.authorKim, Bum-Kyuko
dc.contributor.authorBae, Myung-Hoko
dc.contributor.authorKim, Namko
dc.date.accessioned2019-09-24T12:20:51Z-
dc.date.available2019-09-24T12:20:51Z-
dc.date.created2019-09-24-
dc.date.created2019-09-24-
dc.date.created2019-09-24-
dc.date.created2019-09-24-
dc.date.created2019-09-24-
dc.date.issued2019-08-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.75, no.4, pp.331 - 336-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/267675-
dc.description.abstractParallelization of pump devices is a direct way to increase the output level of the single-electron pump, which is required for metrological purposes. We fabricated a pair of single-electron pumps in parallel on a chip level and investigated their synchronized electron pumping phenomena. In the investigation, the pumping error was estimated to see whether the error was increased after the parallelization. We found that a proper choice of rf gates must be made in accordance with the direction of the applied magnetic field. In relation with the chirality of the edge state, the rf modulating gates should be chosen not to produce rf-induced heating effects.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.titleParallelized Single-Electron Pumps Based on Gate-Tunable Quantum Dots-
dc.typeArticle-
dc.identifier.wosid000483837100011-
dc.identifier.scopusid2-s2.0-85071655094-
dc.type.rimsART-
dc.citation.volume75-
dc.citation.issue4-
dc.citation.beginningpage331-
dc.citation.endingpage336-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.identifier.doi10.3938/jkps.75.331-
dc.identifier.kciidART002493268-
dc.contributor.localauthorSim, Heung-Sun-
dc.contributor.nonIdAuthorGhee, Young-Seok-
dc.contributor.nonIdAuthorAhn, Ye-Hwan-
dc.contributor.nonIdAuthorRyu, Sungguen-
dc.contributor.nonIdAuthorHong, Changki-
dc.contributor.nonIdAuthorKim, Bum-Kyu-
dc.contributor.nonIdAuthorBae, Myung-Ho-
dc.contributor.nonIdAuthorKim, Nam-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorSingle-electron transistor-
dc.subject.keywordAuthorSingle-electron pump-
dc.subject.keywordAuthorSemiconductor quantum dot-
dc.subject.keywordAuthorElectron transport-
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