Density functional theory based modeling and quantum transport simulations on uniaxially strained black phosphorus FETs = 단축 변형된 흑린 구조에 대한 밀도 범함수 기반 모델링 및 양자 수송 시뮬레이션

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Black phosphorus (BP) has drawn immense interest because of its peculiar characteristics, and strain engineering studies have been widely conducted to investigate the properties of BP. However, performances of BP based FETs under high degree of strain have not been thoroughly studied yet. In this thesis, the performances of uniaxially strained few-layer BP FETs are investigated by means of first-principles based quantum transport simulations. Interestingly, AD pMOSFET sustains high performance under intense strain conditions, and it suggests that AD pMOSFET has great potential for high performance stretchable electronic devices. On the other hand, BP TFETs show high dependency on the transport direction and the thickness of BP. Moreover, 2L ZD TFET is able to be enhanced by imposing strong compressive strain along the [100] direction. Thus, owing to its high $I_{ON}$/$I_{OFF}$ and low subthreshold swing, we suggest that uniaxially strained 2L ZD TFETs can be utilized for low-power electronics.
Advisors
Shin, Mincheolresearcher신민철researcher
Description
한국과학기술원 :전기및전자공학부,
Publisher
한국과학기술원
Issue Date
2018
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2018.2,[v, 44 p. :]

Keywords

Black phosphorus▼astrain engineering▼aMOSFET▼aTunnel FET▼aquantum transport simulation▼ahigh performance stretchable electronics▼alow-power electronics; 흑린▼a인장효과▼a제일원리 계산▼a전계 효과 트랜지스터▼a터널링 전계 효과 트랜지스터▼a양자 수송 시뮬레이션▼a고성능 유연소자▼a저전력 소자

URI
http://hdl.handle.net/10203/266818
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=734052&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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