Terahertz monolithic imagers adopting a VCO-based signal processing = VCO 기반 신호처리를 적용한 테라헤르츠 단일칩 이미저

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In this dissertation, MOSFET characteristics for terahertz (THz) detector application is analyzed to predict the THz responsivity, and is verified by SPICE simulation and 300 GHz on-wafer measurement. The analysis of THz responsivity and noise equivalent power (NEP) depending on the channel dimension and source/drain junction area of the MOSFET detector as well as on the frequency can provide a useful reference for the design of THz detectors. Also, a new architecture of THz imager adopting a VCO-based signal processing is proposed, and 0.5/1.5 THz array imagers are implemented in a 65 nm CMOS. The proposed THz imager architecture presents high signal-to-noise ratio performance, which results in about hundred times enhanced NEP and noise equivalent temperature difference (NETD) compare to previously reported THz imagers. Consequently, a high resolution THz image is obtained by monolithically implemented imager without requiring any external highly sensitive equipment.
Advisors
Lee, Sang-Gugresearcher이상국researcher
Description
한국과학기술원 :전기및전자공학부,
Publisher
한국과학기술원
Issue Date
2016
Identifier
325007
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 전기및전자공학부, 2016.8,[vii, 70 p. :]

Keywords

Terahertz detector▼aMOSFET power detector▼aplasma wave detector▼adistributed channel model▼aterahertz imaging▼anoise equivalent power▼anoise equivalent temperature difference; 테라헤르츠 검출기▼a모스펫 전력 검출기▼a플라즈마파 검출기▼a채널 분포 모델▼a테라헤르츠 이미징▼a잡음등가전력▼a잡음등가온도차

URI
http://hdl.handle.net/10203/265252
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=849836&flag=dissertation
Appears in Collection
EE-Theses_Ph.D.(박사논문)
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