Study on inhomogeneity of doping and emission in group III-nitride semiconductor rod structures and their optoelectronic device applications = 질화물 반도체 막대구조의 도핑 및 발광 불균일성 분석과 광전소자로의 응용

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III-nitride semiconductors are compound semiconductors having direct band gap and are used for materials of optoelectronic devices. GaN-based rod structure enhances efficiency in the optoelectronic devices. However, there is inhomogeneity in luminescence and doping properties along the rod structure due to the three-dimensional structure different with film case. Because this inhomogeneity affects the performance of the optoelectronic devices, understanding of this property is an important issue. In this dissertation, we systematically studied inhomogeneous emission properties in active layers and doping variation by Mg-doping in the GaN rod. As a result, we confirmed the wavelength, efficiency and polarization change at a different position in the active layers. In addition, composition and electrical properties change by Mg-doping were comprehensively studied by componential, electrical, and optical analyses. Furthermore, we proposed a new designed photonic crystal laser based on a single nanorod. It is expected that this analyses results of inhomogeneity in the GaN rod will contribute to enhance the efficiency of the optoelectronic devices and the new designed nanorod-based laser will be used for a variety of applications.
Advisors
Cho, Yong-Hoonresearcher조용훈researcher
Description
한국과학기술원 :물리학과,
Publisher
한국과학기술원
Issue Date
2018
Identifier
325007
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 물리학과, 2018.8,[vii, 90 p. :]

Keywords

III-nitride semiconductor▼arod structure▼aemission inhomogeneity▼ainhomogeneous doping▼ananorod based laser; 질화물반도체▼a막대구조▼a발광 불균일성▼a불균일한 도핑▼a나노막대 기반 레이저

URI
http://hdl.handle.net/10203/264669
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=828268&flag=dissertation
Appears in Collection
PH-Theses_Ph.D.(박사논문)
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