Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar Cells

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Solar cells from III-V materials offer outstanding light conversion efficiency and power densities and have a proven reliability record. Nevertheless, the utilization of III-V devices has been hindered by high production costs that partially stem from expensive substrates for the growth of III-V materials. Here, we present an ultrathin epitaxially ready single-crystal Ge membrane, formed by germanium-on-nothing (GON) technology, which employs morphological evolution of an arrayed porous Ge during hydrogen annealing. This new process, inspired by a silicon-on-nothing (SON) process, significantly improves the reformed Ge surface compared with previous porous Ge studies such that low-defect-density heteroepitaxy of GaAs is achievable. We demonstrated the growth of a 14.44% efficient GaAs solar cell on GON with nearly identical open circuit voltage to a control cell grown on a bulk Ge and successfully transferred it onto an inexpensive handle by employing the plate-like void under the Ge film as a release layer.
Publisher
CELL PRESS
Issue Date
2019-07
Language
English
Article Type
Article
Citation

Joule, v.3, no.7, pp.1782 - 1793

ISSN
2542-4351
DOI
10.1016/j.joule.2019.05.013
URI
http://hdl.handle.net/10203/263975
Appears in Collection
MS-Journal Papers(저널논문)
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