Two-Step-Enhanced Stability of Quantum Dots via Silica and Siloxane Encapsulation for the Long-Term Operation of Light Emitting Diodes

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dc.contributor.authorKim, Yun Hyeokko
dc.contributor.authorLee, Hyunhwanko
dc.contributor.authorKang, Seung-Moko
dc.contributor.authorBae, Byeong-Sooko
dc.date.accessioned2019-07-18T05:32:54Z-
dc.date.available2019-07-18T05:32:54Z-
dc.date.created2019-07-15-
dc.date.issued2019-06-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, v.11, no.25, pp.22801 - 22808-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10203/263321-
dc.description.abstractDespite innovative optical properties of quantum dots (QDs) for QDs-converted light-emitting diodes (QD-LEDs), the vulnerability of the QDs, against heat and moisture, has been a critical issue for commercialization and long-term use. To overcome the instabilities, we fabricated a thermally and photostable QDs-embedded silica/siloxane (S-QD/siloxane) film by embedding QDs in silica and siloxane encapsulation through a two-step sol-gel reaction. S-QDs were stably dispersed in the oligo-siloxane resin with even a QD concentration of 5 wt % without aggregation. The two-step physical barriers of silica and siloxane acted to decrease the toxicity of QDs and improve the stability against heat and moisture [85 degrees C/5% relative humidity (RH), 85 degrees C/85% RH, and 120 degrees C/5% RH], light (50 and 100 mA), and chemicals (ethanol, HCl, and NaOH). Our S-QD/siloxane film was applied as a color-conversion material on a blue LED chip without additional solidification and encapsulation processes for red and white QD-LEDs, exhibiting a wider color gamut (107% in CIE 1931) compared to NTSC. These enhancements indicate that our S-QD/siloxane film is a suitable material for long-term operation of QD-enhanced films and QD-LEDs in next-generation displays.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleTwo-Step-Enhanced Stability of Quantum Dots via Silica and Siloxane Encapsulation for the Long-Term Operation of Light Emitting Diodes-
dc.typeArticle-
dc.identifier.wosid000473251100081-
dc.identifier.scopusid2-s2.0-85067925483-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue25-
dc.citation.beginningpage22801-
dc.citation.endingpage22808-
dc.citation.publicationnameACS APPLIED MATERIALS & INTERFACES-
dc.identifier.doi10.1021/acsami.9b06987-
dc.contributor.localauthorBae, Byeong-Soo-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorquantum dots-
dc.subject.keywordAuthorsol-gel reaction-
dc.subject.keywordAuthorwhite light-emitting diodes-
dc.subject.keywordAuthorthermal and photostability-
dc.subject.keywordAuthorlong-term operation-
dc.subject.keywordPlusHIGHLY LUMINESCENT-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusSEMICONDUCTOR-
dc.subject.keywordPlusNANOCRYSTALS-
dc.subject.keywordPlusEMISSION-
dc.subject.keywordPlusFLUORESCENCE-
dc.subject.keywordPlusAGGREGATION-
dc.subject.keywordPlusMONOLITH-
dc.subject.keywordPlusLCD-
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