Influence of Self-Heating Effect on Interface Trap Generation in Highly Flexible Single-Crystalline Si Nanomembrane Transistors

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dc.contributor.authorBong, Jae Hoonko
dc.contributor.authorKim, Seung-Yoonko
dc.contributor.authorJeong, Chan Baeko
dc.contributor.authorChang, Ki Sooko
dc.contributor.authorHwang, Wan Sikko
dc.contributor.authorCho, Byung Jinko
dc.date.accessioned2019-06-17T01:50:03Z-
dc.date.available2019-06-17T01:50:03Z-
dc.date.created2019-06-12-
dc.date.created2019-06-12-
dc.date.issued2019-10-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.19, no.10, pp.6481 - 6486-
dc.identifier.issn1533-4880-
dc.identifier.urihttp://hdl.handle.net/10203/262606-
dc.description.abstractWe analyze the interface trap states generated by the self-heating effect in flexible single-crystalline Si nanomembrane (sc-Si NM) transistors. Despite the excellent device performance (Subthreshold swing: similar to 61 mV/dec, I-on/off: similar to 10(9), N-it: similar to 5x10(10) cm(-2), mu(eff): similar to 250 cm(2)/V.s) and mechanical flexibility (R-B,R-min = 1 mm) of sc-Si NM transistors on a polymer substrate, they are vulnerable to thermal reliability issues due to the poor thermal conductivity (kappa < 1 W/m.K) of the polymer substrate. Understanding the detailed mechanism driving heat-related device degradation is key to improving device reliability, life expectancy, and overall device performance. Thus, a charge pumping method was employed to systematically analyze the device degradation caused by the self-heating effect. This enabled the interface trap density to be investigated for the flexible sc-Si NM transistors on a polymer substrate after a bias stress. For comparison, a heat spreading layer (HSL) made using a 1-mu m thick Ag film (kappa similar to 400 W/m.K) was integrated into the sc-Si NM device to mitigate the self-heating effect. The results showed that the interface trap density was proportional to the self-heating effect. This facilitated the fundamental understanding of the self-heating effect of flexible sc-Si NM transistors, opening a robust route to realizing high performance flexible devices using sc-Si NM.-
dc.languageEnglish-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.titleInfluence of Self-Heating Effect on Interface Trap Generation in Highly Flexible Single-Crystalline Si Nanomembrane Transistors-
dc.typeArticle-
dc.identifier.wosid000466046800083-
dc.type.rimsART-
dc.citation.volume19-
dc.citation.issue10-
dc.citation.beginningpage6481-
dc.citation.endingpage6486-
dc.citation.publicationnameJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.identifier.doi10.1166/jnn.2019.17067-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorJeong, Chan Bae-
dc.contributor.nonIdAuthorChang, Ki Soo-
dc.contributor.nonIdAuthorHwang, Wan Sik-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorSi Nanomembrane Transistor-
dc.subject.keywordAuthorFD-SOI MOSFET-
dc.subject.keywordAuthorSelf-Heating Effect-
dc.subject.keywordAuthorInterface Trap Density-
dc.subject.keywordAuthorCharge Pumping Method-
dc.subject.keywordAuthorHeat Spreading Layer-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusCHANNEL MOBILITY-
dc.subject.keywordPlusDEGRADATION-
dc.subject.keywordPlusCIRCUITS-
dc.subject.keywordPlusVINYL-
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