DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bong, Jae Hoon | ko |
dc.contributor.author | Kim, Seung-Yoon | ko |
dc.contributor.author | Jeong, Chan Bae | ko |
dc.contributor.author | Chang, Ki Soo | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2019-06-17T01:50:03Z | - |
dc.date.available | 2019-06-17T01:50:03Z | - |
dc.date.created | 2019-06-12 | - |
dc.date.created | 2019-06-12 | - |
dc.date.issued | 2019-10 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.19, no.10, pp.6481 - 6486 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://hdl.handle.net/10203/262606 | - |
dc.description.abstract | We analyze the interface trap states generated by the self-heating effect in flexible single-crystalline Si nanomembrane (sc-Si NM) transistors. Despite the excellent device performance (Subthreshold swing: similar to 61 mV/dec, I-on/off: similar to 10(9), N-it: similar to 5x10(10) cm(-2), mu(eff): similar to 250 cm(2)/V.s) and mechanical flexibility (R-B,R-min = 1 mm) of sc-Si NM transistors on a polymer substrate, they are vulnerable to thermal reliability issues due to the poor thermal conductivity (kappa < 1 W/m.K) of the polymer substrate. Understanding the detailed mechanism driving heat-related device degradation is key to improving device reliability, life expectancy, and overall device performance. Thus, a charge pumping method was employed to systematically analyze the device degradation caused by the self-heating effect. This enabled the interface trap density to be investigated for the flexible sc-Si NM transistors on a polymer substrate after a bias stress. For comparison, a heat spreading layer (HSL) made using a 1-mu m thick Ag film (kappa similar to 400 W/m.K) was integrated into the sc-Si NM device to mitigate the self-heating effect. The results showed that the interface trap density was proportional to the self-heating effect. This facilitated the fundamental understanding of the self-heating effect of flexible sc-Si NM transistors, opening a robust route to realizing high performance flexible devices using sc-Si NM. | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Influence of Self-Heating Effect on Interface Trap Generation in Highly Flexible Single-Crystalline Si Nanomembrane Transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000466046800083 | - |
dc.type.rims | ART | - |
dc.citation.volume | 19 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 6481 | - |
dc.citation.endingpage | 6486 | - |
dc.citation.publicationname | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1166/jnn.2019.17067 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Jeong, Chan Bae | - |
dc.contributor.nonIdAuthor | Chang, Ki Soo | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Si Nanomembrane Transistor | - |
dc.subject.keywordAuthor | FD-SOI MOSFET | - |
dc.subject.keywordAuthor | Self-Heating Effect | - |
dc.subject.keywordAuthor | Interface Trap Density | - |
dc.subject.keywordAuthor | Charge Pumping Method | - |
dc.subject.keywordAuthor | Heat Spreading Layer | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | CHANNEL MOBILITY | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | VINYL | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.