Fabrication of Tandem-type Vertically Integrated Nanogenerator by In-situ Deposition of AlN/ZnO Films

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dc.contributor.authorYim, Munhyukko
dc.contributor.authorJeon, Builko
dc.contributor.authorYoon, Giwanko
dc.date.accessioned2019-06-03T10:26:23Z-
dc.date.available2019-06-03T10:26:23Z-
dc.date.created2019-06-03-
dc.date.issued2019-04-
dc.identifier.citationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.19, no.2, pp.233 - 238-
dc.identifier.issn1598-1657-
dc.identifier.urihttp://hdl.handle.net/10203/262450-
dc.description.abstractIn this paper, we present a tandem-type vertically integrated nanogenerator (TYING) device with five layers of alternately stacked thin films (AlN/ZnO/AlN/ZnO/AlN). The TYING device shows about twice larger output voltages than the conventional VING device with three layers of stacked thin films (AlN/ZnO/AlN). Moreover, the TYING device can be fabricated in a tandem-type structure simply through the vertical integration of two similar VING devices. This device will be usefully applied for biocompatible micro-energy harvesting systems.-
dc.languageEnglish-
dc.publisherIEEK PUBLICATION CENTER-
dc.titleFabrication of Tandem-type Vertically Integrated Nanogenerator by In-situ Deposition of AlN/ZnO Films-
dc.typeArticle-
dc.identifier.wosid000465573000015-
dc.type.rimsART-
dc.citation.volume19-
dc.citation.issue2-
dc.citation.beginningpage233-
dc.citation.endingpage238-
dc.citation.publicationnameJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.identifier.doi10.5573/JSTS.2019.19.2.233-
dc.identifier.kciidART002459028-
dc.contributor.localauthorYoon, Giwan-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorNanogenerator-
dc.subject.keywordAuthorzinc oxide-
dc.subject.keywordAuthoraluminium nitride-
dc.subject.keywordAuthortandem-type-
dc.subject.keywordAuthorinterlayer-
dc.subject.keywordAuthorvertical integration-
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