Fabrication of Tandem-type Vertically Integrated Nanogenerator by In-situ Deposition of AlN/ZnO Films

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In this paper, we present a tandem-type vertically integrated nanogenerator (TYING) device with five layers of alternately stacked thin films (AlN/ZnO/AlN/ZnO/AlN). The TYING device shows about twice larger output voltages than the conventional VING device with three layers of stacked thin films (AlN/ZnO/AlN). Moreover, the TYING device can be fabricated in a tandem-type structure simply through the vertical integration of two similar VING devices. This device will be usefully applied for biocompatible micro-energy harvesting systems.
Publisher
IEEK PUBLICATION CENTER
Issue Date
2019-04
Language
English
Article Type
Article
Citation

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.19, no.2, pp.233 - 238

ISSN
1598-1657
DOI
10.5573/JSTS.2019.19.2.233
URI
http://hdl.handle.net/10203/262450
Appears in Collection
EE-Journal Papers(저널논문)
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