Carrier relaxation in Si/SiO2 quantum dots

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Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots (QDs) in SiO2 matrix is considered. Interaction of confined holes with optical phonons is studied. The Huang-Rhys factor governing intraband transitions induced by this interaction is calculated. The probability of intraband transition of a confined hole emitting several optical phonons is estimated. (C) 2008 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2009-05
Language
English
Article Type
Article; Proceedings Paper
Citation

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.41, no.6, pp.969 - 971

ISSN
1386-9477
DOI
10.1016/j.physe.2008.08.053
URI
http://hdl.handle.net/10203/261901
Appears in Collection
PH-Journal Papers(저널논문)
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