Method for separating nanogenerator and method for manufacturing nanogenerator using the same동일한 것을 사용하는 나노폭탄을 분리시키기 위한 방법과 나노폭탄을 제조하기 위한 방법

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dc.contributor.authorLee, Keon Jaeko
dc.contributor.authorByun, Myung Hwanko
dc.contributor.authorPark, Kwi Ilko
dc.contributor.authorHwang, Geon Taeko
dc.contributor.authorChung, Chang Kyuko
dc.date.accessioned2019-04-30T04:52:23Z-
dc.date.available2019-04-30T04:52:23Z-
dc.date.issued2019-01-01-
dc.identifier.urihttp://hdl.handle.net/10203/261653-
dc.description.abstractProvided is a method for separating a nanogenerator, which includes laminating a buffer layer on a sacrificial substrate, making a nanogenerator on the buffer layer, laminating a metal layer on the nanogenerator and separating the nanogenerator from the buffer layer. Here, a nanogenerator is separated by using a stress difference between the sacrificial substrate and the metal layer, instead of an existing method in which a nanogenerator is separated from the sacrificial substrate by means of wet etching or the like. In particular, according to a difference between a tensile stress at the metal layer such as nickel and a compressive stress at the lower silicon substrate, the nanogenerator is intactly separated from the silicon oxide layer serving as a buffer layer. Therefore, the nanogenerator may be separated from the sacrificial substrate in a mechanical way, which is safer and more economic in comparison to an existing chemical separation method using an etching solution. Further, it is also possible to avoid a damage of the nanogenerator caused by an etching solution.-
dc.titleMethod for separating nanogenerator and method for manufacturing nanogenerator using the same-
dc.title.alternative동일한 것을 사용하는 나노폭탄을 분리시키기 위한 방법과 나노폭탄을 제조하기 위한 방법-
dc.typePatent-
dc.type.rimsPAT-
dc.contributor.localauthorLee, Keon Jae-
dc.contributor.nonIdAuthorByun, Myung Hwan-
dc.contributor.nonIdAuthorPark, Kwi Il-
dc.contributor.nonIdAuthorHwang, Geon Tae-
dc.contributor.nonIdAuthorChung, Chang Kyu-
dc.contributor.assigneeKAIST-
dc.identifier.iprsType특허-
dc.identifier.patentApplicationNumber14538154-
dc.identifier.patentRegistrationNumber10166400-
dc.date.application2014-11-11-
dc.date.registration2019-01-01-
dc.publisher.countryUS-
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MS-Patent(특허)
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