NEW P-CHANNEL MOSFET STRUCTURE WITH SCHOTTKY-CLAMPED SOURCE AND DRAIN.
- Language
- English
- Citation
Technical Digest - International Electron Devices Meeting 1984., pp.609 - 612
- ISSN
- 0163-1918
- Appears in Collection
- RIMS Conference Papers
- Files in This Item
- There are no files associated with this item.
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