Varactor diode controllable by surface layout design면적변환 가변용량 다이오드

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An area-variable varactor diode is disclosed, in which the capacitance can be arbitrarily varied under an applied bias voltage. The area-variable varactor diode is characterized in that, in order to ensure freedom to designing the epi-layer, to obtain the desired capacitance characteristics, and to facilitate the integration with other elements, a steeply varied depletion layer area is provided through a variation of the surface layout area, and thus, varied capacitance characteristics are obtained. In steeply varying the area of the depletion layer, an etching of the active layer, a selective epi-layer growth, and an ion implantation are carried out or a combination of them is carried out. The capacitance characteristics are varied in accordance with the pattern of the mask, and therefore, a restriction is not imposed on the epi-layer, with the result that an integration with other elements becomes easy. Further, because the mask pattern is resorted to, it becomes possible to manufacture a varactor diode which shows a capacitance variation of a strong non-linearity and a large capacitance variation rate.
Assignee
KAIST
Country
US (United States)
Issue Date
1998-05-05
Application Date
1997-02-18
Application Number
08802012
Registration Date
1998-05-05
Registration Number
5747865
URI
http://hdl.handle.net/10203/258317
Appears in Collection
EE-Patent(특허)
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