DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chegal, W | ko |
dc.contributor.author | Cho, YJ | ko |
dc.contributor.author | Oh, SB | ko |
dc.contributor.author | Cho, HM | ko |
dc.contributor.author | Lee, YW | ko |
dc.contributor.author | Kim, Soohyun | ko |
dc.date.accessioned | 2007-12-28T07:16:03Z | - |
dc.date.available | 2007-12-28T07:16:03Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-03 | - |
dc.identifier.citation | MEASUREMENT SCIENCE & TECHNOLOGY, v.16, pp.716 - 722 | - |
dc.identifier.issn | 0957-0233 | - |
dc.identifier.uri | http://hdl.handle.net/10203/2575 | - |
dc.description.abstract | Data reduction and calibration procedures are introduced for a,novel rotating-analyser-type spectral imaging ellipsometer. Using a monaxial power spectrograph, we developed a unique spectral imaging ellipsometer. It combines one-dimensional imaging ellipsometry with spectroscopic ellipsometry, and enables real-time measurement of the optical parameters and dimensional structures of patterned or multilayered thin film. It also has more calibration factors than conventional ellipsometers. We therefore present a method using Jones matrices for describing the polarization sensitivity of the spectrograph and random noise of the CCD array. For a patterned SiO2 layer on a silicon wafer, we used the spectral imaging ellipsometer to obtain a one-dimensional thickness profile. | - |
dc.description.sponsorship | For this research, the authors acknowledge the support of the NT-BTMeasurement and Manipulation Project and the Center for Nanoscale Mechatronics and Manufacturing. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | SILICON | - |
dc.subject | MICROELLIPSOMETRY | - |
dc.subject | SURFACES | - |
dc.subject | DESIGN | - |
dc.subject | SYSTEM | - |
dc.title | Calibration method for rotating-analyser-type spectral imaging ellipsometers | - |
dc.type | Article | - |
dc.identifier.wosid | 000227766500015 | - |
dc.identifier.scopusid | 2-s2.0-24144447672 | - |
dc.type.rims | ART | - |
dc.citation.volume | 16 | - |
dc.citation.beginningpage | 716 | - |
dc.citation.endingpage | 722 | - |
dc.citation.publicationname | MEASUREMENT SCIENCE & TECHNOLOGY | - |
dc.identifier.doi | 10.1088/0957-0233/16/3/014 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kim, Soohyun | - |
dc.contributor.nonIdAuthor | Chegal, W | - |
dc.contributor.nonIdAuthor | Cho, YJ | - |
dc.contributor.nonIdAuthor | Oh, SB | - |
dc.contributor.nonIdAuthor | Cho, HM | - |
dc.contributor.nonIdAuthor | Lee, YW | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | thickness profile | - |
dc.subject.keywordAuthor | spectral imaging | - |
dc.subject.keywordAuthor | imaging ellipsometry | - |
dc.subject.keywordAuthor | calibration method | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | MICROELLIPSOMETRY | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | SYSTEM | - |
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