Investigation of interface trap states in Schotty-based colloidal quantum dot solar cells with formation of ultrathin oxide interfacial layer

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dc.contributor.author정연식ko
dc.contributor.author최민재ko
dc.date.accessioned2019-04-15T17:10:11Z-
dc.date.available2019-04-15T17:10:11Z-
dc.date.created2014-01-09-
dc.date.issued2013-11-08-
dc.identifier.citation2013 추계 전기화학회-
dc.identifier.urihttp://hdl.handle.net/10203/256383-
dc.languageKorean-
dc.publisher한국전기화학회-
dc.titleInvestigation of interface trap states in Schotty-based colloidal quantum dot solar cells with formation of ultrathin oxide interfacial layer-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname2013 추계 전기화학회-
dc.identifier.conferencecountryKO-
dc.contributor.localauthor정연식-
dc.contributor.nonIdAuthor최민재-
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MS-Conference Papers(학술회의논문)
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