DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Guk-Jin | ko |
dc.contributor.author | Lee, Seung-Hwan | ko |
dc.contributor.author | Lee, Seung Hee | ko |
dc.contributor.author | Shim, Jun-Bo | ko |
dc.contributor.author | Ra, Jong-Hyun | ko |
dc.contributor.author | Park, Kyoung Woo | ko |
dc.contributor.author | Yeom, Hyein | ko |
dc.contributor.author | Nam, Yunyong | ko |
dc.contributor.author | Kwon, Oh-Kyong | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.date.accessioned | 2019-04-15T14:30:53Z | - |
dc.date.available | 2019-04-15T14:30:53Z | - |
dc.date.created | 2019-03-18 | - |
dc.date.created | 2019-03-18 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v.9 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/10203/254123 | - |
dc.description.abstract | The fingerprint recognition has been widely used for biometrics in mobile devices. Existing fingerprint sensors have already been commercialized in the field of mobile devices using primarily Si-based technologies. Recently, mutual-capacitive fingerprint sensors have been developed to lower production costs and expand the range of application using thin-film technologies. However, since the mutualcapacitive method detects the change of mutual capacitance, it has high ratio of parasitic capacitance to ridge-to-valley capacitance, resulting in low sensitivity, compared to the self-capacitive method. In order to demonstrate the self-capacitive fingerprint sensor, a switching device such as a transistor should be integrated in each pixel, which reduces a complexity of electrode configuration and sensing circuits. The oxide thin-film transistor (TFT) can be a good candidate as a switching device for the self-capacitive fingerprint sensor. In this work, we report a systematic approach for self-capacitive fingerprint sensor integrating Al-InSnZnO TFTs with field-effect mobility higher than 30 cm(2)/Vs, which enable isolation between pixels, by employing industry-friendly process methods. The fingerprint sensors are designed to reduce parasitic resistance and capacitance in terms of the entire system. The excellent uniformity and low leakage current (<10(-12)) of the oxide TFTs allow successful capture of a fingerprint image. | - |
dc.language | English | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Highly Sensitive Active-Matrix Driven Self-Capacitive Fingerprint Sensor based on Oxide Thin Film Transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000459983900022 | - |
dc.identifier.scopusid | 2-s2.0-85062428491 | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.publicationname | SCIENTIFIC REPORTS | - |
dc.identifier.doi | 10.1038/s41598-019-40005-x | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Lee, Seung-Hwan | - |
dc.contributor.nonIdAuthor | Shim, Jun-Bo | - |
dc.contributor.nonIdAuthor | Ra, Jong-Hyun | - |
dc.contributor.nonIdAuthor | Kwon, Oh-Kyong | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TFTS | - |
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