DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, ST | ko |
dc.contributor.author | Kim, HH | ko |
dc.contributor.author | Lee, MY | ko |
dc.contributor.author | Lee, Won-Jong | ko |
dc.date.accessioned | 2011-09-20T04:28:51Z | - |
dc.date.available | 2011-09-20T04:28:51Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-01 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.1A, pp.294 - 300 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/25255 | - |
dc.description.abstract | Pt films, as bottom electrodes for PZT capacitors, were deposited on Ti/SiO2/Si substrates using DC magnetron sputtering under various deposition conditions. The effects of post-annealing on surface morphology, element diffusion. microstructure and structural phase of the Pt films were investigated. The structure and electrical properties of PZT films deposited on Pt/Ti/SiO2/Si electrodes were also studied. As the deposition temperature of the Pt film increases and the deposition rate decreases, the film becomes dense so that Ti out-diffusion and film deformation are suppressed. The out-diffused Ti faciliates the formation of nucleation sites for perovskite PZT films. However, excess Ti out-diffusion not only decreases the total capacitance of the PZT films due to formation of an interfacial layer having a low dielectric constant but also degrades the leakage current characteristics of the PZT films due to deformation of the Pt electrode. | - |
dc.description.sponsorship | Samsung Electronics Co. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | THIN-FILMS | - |
dc.subject | PB(ZR | - |
dc.title | Investigation of Pt/Ti bottom electrodes for Pb(Zr,Ti)O-3 films | - |
dc.type | Article | - |
dc.identifier.wosid | A1997WG05600055 | - |
dc.identifier.scopusid | 2-s2.0-0030708259 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 1A | - |
dc.citation.beginningpage | 294 | - |
dc.citation.endingpage | 300 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Won-Jong | - |
dc.contributor.nonIdAuthor | Kim, ST | - |
dc.contributor.nonIdAuthor | Kim, HH | - |
dc.contributor.nonIdAuthor | Lee, MY | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | ferroelectric thin films | - |
dc.subject.keywordAuthor | Pt | - |
dc.subject.keywordAuthor | PZT | - |
dc.subject.keywordAuthor | electrode | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | sputtering | - |
dc.subject.keywordAuthor | ECR plasma | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | PB(ZR | - |
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