Investigation of Pt/Ti bottom electrodes for Pb(Zr,Ti)O-3 films

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Pt films, as bottom electrodes for PZT capacitors, were deposited on Ti/SiO2/Si substrates using DC magnetron sputtering under various deposition conditions. The effects of post-annealing on surface morphology, element diffusion. microstructure and structural phase of the Pt films were investigated. The structure and electrical properties of PZT films deposited on Pt/Ti/SiO2/Si electrodes were also studied. As the deposition temperature of the Pt film increases and the deposition rate decreases, the film becomes dense so that Ti out-diffusion and film deformation are suppressed. The out-diffused Ti faciliates the formation of nucleation sites for perovskite PZT films. However, excess Ti out-diffusion not only decreases the total capacitance of the PZT films due to formation of an interfacial layer having a low dielectric constant but also degrades the leakage current characteristics of the PZT films due to deformation of the Pt electrode.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1997-01
Language
English
Article Type
Article
Keywords

THIN-FILMS; PB(ZR

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.1A, pp.294 - 300

ISSN
0021-4922
URI
http://hdl.handle.net/10203/25255
Appears in Collection
MS-Journal Papers(저널논문)
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