DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Duck Hyun | ko |
dc.contributor.author | Lee, Won-Jong | ko |
dc.contributor.author | Kim, Sang Ouk | ko |
dc.date.accessioned | 2011-09-02T04:55:17Z | - |
dc.date.available | 2011-09-02T04:55:17Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-04 | - |
dc.identifier.citation | NANO LETTERS, v.9, no.4, pp.1427 - 1432 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/25076 | - |
dc.description.abstract | We demonstrate a straightforward approach for rapid growth of wall-number selected, N-doped CNT arrays. Highly uniform nanopatterned iron catalyst arrays were prepared by tilted deposition through block copolymer nanotemplates. PECVD growth of CNTs from the nanopatterned catalysts in an NH(3) environment generated vertical N-doped CNTs with a fine-tunability of their carbon wall numbers. The optimized growth conditions produced 52 mu m long N-doped CNTs within 1 min. Owing to N-doping, the wall-number selected CNTs including DWNTs and TWNTs demonstrated enhanced electro-conductivity and chemical functionality. This remarkably fast growth of highly uniform N-doped CNTs, whose material properties and chemical functionalizability are reinforced by N-doping, offers a new area of large-scale nanofabrication, potentially useful for diverse nanodevices. | - |
dc.description.sponsorship | This work was supported by the Center for Electronic Packaging Materials (ERC) (R11-2000-085-08004-0), World Class University (WCU) program (R32-2008-000-10051-0), the Korea Science and Engineering Foundation (KOSEF) (R11-2008-058-03002-0), the National Research Laboratory Program (R0A-2008-000-20057-0), the second stage of the Brain Korea 21 project, and the 21st Century Frontier Research Programs (Center for Nanoscale Mechatronics & Manufacturing, 08K1401-01010), funded by the Korean government (MEST). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | BLOCK-COPOLYMERS | - |
dc.subject | NITROGEN | - |
dc.subject | LITHOGRAPHY | - |
dc.subject | FILMS | - |
dc.title | Highly Efficient Vertical Growth of Wall-Number-Selected, N-Doped Carbon Nanotube Arrays | - |
dc.type | Article | - |
dc.identifier.wosid | 000265030000027 | - |
dc.identifier.scopusid | 2-s2.0-65249100040 | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 1427 | - |
dc.citation.endingpage | 1432 | - |
dc.citation.publicationname | NANO LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Won-Jong | - |
dc.contributor.localauthor | Kim, Sang Ouk | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | BLOCK-COPOLYMERS | - |
dc.subject.keywordPlus | NITROGEN | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | FILMS | - |
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