Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature

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dc.contributor.authorSong, Hohyunko
dc.contributor.authorSeo, Sang Hunko
dc.contributor.authorChang, Hongyoungko
dc.date.accessioned2018-11-12T04:17:35Z-
dc.date.available2018-11-12T04:17:35Z-
dc.date.created2018-08-27-
dc.date.created2018-08-27-
dc.date.created2018-08-27-
dc.date.created2018-08-27-
dc.date.created2018-08-27-
dc.date.issued2018-11-
dc.identifier.citationCURRENT APPLIED PHYSICS, v.18, no.11, pp.1436 - 1440-
dc.identifier.issn1567-1739-
dc.identifier.urihttp://hdl.handle.net/10203/246302-
dc.description.abstractSiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power N-2 plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature (300-500 degrees C).-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.titleStudy on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature-
dc.typeArticle-
dc.identifier.wosid000446676900044-
dc.identifier.scopusid2-s2.0-85054131694-
dc.type.rimsART-
dc.citation.volume18-
dc.citation.issue11-
dc.citation.beginningpage1436-
dc.citation.endingpage1440-
dc.citation.publicationnameCURRENT APPLIED PHYSICS-
dc.identifier.doi10.1016/j.cap.2018.08.012-
dc.contributor.localauthorChang, Hongyoung-
dc.contributor.nonIdAuthorSeo, Sang Hun-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorHigh-power-
dc.subject.keywordAuthorHigh-density-
dc.subject.keywordAuthorMulti-ICP nitrogen plasma-
dc.subject.keywordAuthorPE-ALD-
dc.subject.keywordAuthorLow-temperature-
dc.subject.keywordPlusATOMIC LAYER DEPOSITION-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusSILICON-NITRIDE FILMS-
dc.subject.keywordPlusLANGMUIR PROBE-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusPLASMA-
dc.subject.keywordPlusTECHNOLOGY-
dc.subject.keywordPlusDISCHARGES-
dc.subject.keywordPlusHELICONS-
dc.subject.keywordPlusLPCVD-
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