(A) study on vertical oxide thin-film transistor with solution-processed channel define layer

Abstract

In this study, the vertical channel thin film transistor based on oxide semiconductor for ultra-high resolution OLED was fabricated with channel-define layer using solution process instead of the vacuum process. The solution process has several advantages such as easy method to fabricate thick films as well as low cost to manufacture. In addition, in order to increase concern of flexible device, the flexibility of channel define layer which is the thickest part within V-TFT, should be improved. Therefore, we fabricated a device using organic material such as polyimide to confirm the applicability for V-TFT. Using a solution process, we fabricated silicon oxide with good chemical and electrical characteristics, and then top-gate staggered TFT with solution processed SiO2 (Sol-SiO2) buffer layer was fabricated and compared the performance difference with PECVD SiO2 buffer layer. The Sol-SiO2 device performance shows any degradation, so we applied Sol-SiO2 to spacer of V-TFT. And we fabrication a top gate device using polyimide buffer layer, confirmed the influence of organic back channel on oxide TFTs, and applied polyimide to fabricate vertical transistor.