DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seung Tae | ko |
dc.contributor.author | Kim, Kihwan | ko |
dc.contributor.author | Yun, Jae Ho | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2018-06-16T07:36:09Z | - |
dc.date.available | 2018-06-16T07:36:09Z | - |
dc.date.created | 2018-06-11 | - |
dc.date.created | 2018-06-11 | - |
dc.date.issued | 2018-08 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v.18, no.8, pp.912 - 918 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://hdl.handle.net/10203/242516 | - |
dc.description.abstract | In the conventional three-stage co-evaporation process to grow Cu(In, Ga)Se-2 (CIGS) film, a large grain is achieved by the co-evaporation of Cu and Se on (In, Ga)(2)Se-3 layer at 550 degrees C in the second stage and then a p-type is achieved by the co-evaporation of In, Ga, and Se in the third-stage. We reported a new process where a CIGS film with a large gain and p-type is achieved by evaporation of Cu only in the second stage at 400 degrees C and by the Se annealing in the third stage. In the new process, thermal budget was lowered and the third-stage co-evaporation process was eliminated. It was found that the CIGS gain size increased when the Cu/(In+Ga) ratio was above 0.7 and an addition thin CIGS layer appeared on the CIGS surface. The reaction path with Cu was described in the Cu-In-Se ternary phase diagram. The cell conversion efficiency increased from 9.6 to 15.4% as the Se annealing temperature increased from 400 to 550 degrees C in the third stage, mainly due to the increase of open-circuit voltage and fill factor. Our process demonstrated a new route to grow a CIGS film with a less thermal budget and simpler process in the co-evaporation process. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | CU(IN,GA)SE-2 SOLAR-CELLS | - |
dc.subject | CDS BUFFER | - |
dc.subject | EFFICIENCY | - |
dc.subject | CUINSE2 | - |
dc.subject | LAYERS | - |
dc.title | A new simple route to grow Cu(In, Ga)Se-2 thin films with large grains in the co-evaporation process | - |
dc.type | Article | - |
dc.identifier.wosid | 000432852100009 | - |
dc.identifier.scopusid | 2-s2.0-85046770377 | - |
dc.type.rims | ART | - |
dc.citation.volume | 18 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 912 | - |
dc.citation.endingpage | 918 | - |
dc.citation.publicationname | CURRENT APPLIED PHYSICS | - |
dc.identifier.doi | 10.1016/j.cap.2018.04.013 | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Kim, Kihwan | - |
dc.contributor.nonIdAuthor | Yun, Jae Ho | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | CIGS solar cells | - |
dc.subject.keywordAuthor | Co-evaporation process | - |
dc.subject.keywordAuthor | New route | - |
dc.subject.keywordAuthor | Low temperature | - |
dc.subject.keywordAuthor | Cu evaporation | - |
dc.subject.keywordAuthor | Se annealing | - |
dc.subject.keywordPlus | CU(IN,GA)SE-2 SOLAR-CELLS | - |
dc.subject.keywordPlus | CDS BUFFER | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | CUINSE2 | - |
dc.subject.keywordPlus | LAYERS | - |
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