DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Kibeom | ko |
dc.contributor.author | Ahn, Jangyong | ko |
dc.contributor.author | Ahn, Seungyoung | ko |
dc.date.accessioned | 2018-06-16T06:35:47Z | - |
dc.date.available | 2018-06-16T06:35:47Z | - |
dc.date.created | 2018-05-28 | - |
dc.date.created | 2018-05-28 | - |
dc.date.issued | 2018-05 | - |
dc.identifier.citation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.28, no.5, pp.422 - 424 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | http://hdl.handle.net/10203/242413 | - |
dc.description.abstract | Through-silicon via (TSV) technology has emerged as a key component of 3-D integrated circuits. As the integration density in a package increases, the nonlinear metal-oxide-semiconductor (MOS) capacitance in TSVs has a greater effect on the electrical performance of the devices. Imperfections due to the deposition of a dielectric layer are important factors which can change the characteristics of the MOS capacitance. This letter presents a method by which to detect the interface-trap charge density D-it and lateral nonuniformity (LNU) of imperfections in TSVs. The results of an analysis of a measured sample define Dit and LNU at the dielectric-semiconductor interface and demonstrate that the presence of LNU can be established by a negative D-it. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | PERFORMANCE ANALYSIS | - |
dc.subject | MOS CAPACITORS | - |
dc.title | Detection of the Interface-Trap Charge Density and Lateral Nonuniformity of Through-Silicon Vias | - |
dc.type | Article | - |
dc.identifier.wosid | 000432008700020 | - |
dc.identifier.scopusid | 2-s2.0-85045758508 | - |
dc.type.rims | ART | - |
dc.citation.volume | 28 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 422 | - |
dc.citation.endingpage | 424 | - |
dc.citation.publicationname | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.identifier.doi | 10.1109/LMWC.2018.2822731 | - |
dc.contributor.localauthor | Ahn, Seungyoung | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Interface-trap charge density | - |
dc.subject.keywordAuthor | lateral nonuniformity (LNU) | - |
dc.subject.keywordAuthor | metal-oxide-semiconductor (MOS) | - |
dc.subject.keywordAuthor | through-silicon via (TSV) | - |
dc.subject.keywordPlus | PERFORMANCE ANALYSIS | - |
dc.subject.keywordPlus | MOS CAPACITORS | - |
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