Synthesis of ultrathin polymer dielectric layers via initiated chemical vapor deposition (iCVD) and their application to organic electronic devices = 개시제를 이용한 화학 기상 증착법을 통한 고분자 절연 박막의 합성 및 유기전자소자 개발에의 응용

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Dielectric layer is an essential component enabling reliable operation of many electronic devices including thin film transistors (TFTs), flash memories, and capacitors in modern electronic systems. With the emergence of next-generation electronics relying on the mechanical flexibility of materials involved, the new generation of electronic devices requires insulators to work with unconventional substrates and newly emerging semiconductor materials, and polymeric layers are being intensively investigated as new dielectric layers. However, only with few exceptions, the insulating property of the polymer films and device-to-device uniformity degrade abruptly as the polymer becomes thinner. To address this issue, a vapor-phase process, initiated chemical vapor deposition (iCVD), was adopted to develop ultrathin polymer insulators. Inherited from conventional CVD processes, iCVD has a good scalability and compatibility with other high-throughput production processes. Also, the solvent-free nature and low substrate temperature of the iCVD process enables non-destructive deposition onto underlying layers and substrates, which are thermally/chemically sensitive. Furthermore, since the iCVD reactor is compatible with conventional vacuum deposition system for oxides, hybrid-type inorganic-organic bilayer dielectric layer could be also fabricated by combining the iCVD process and atomic layer deposition (ALD) process in a one chamber. In this thesis, four kinds of ultrathin iCVD polymer dielectric layers (poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3), poly(ethylene glycol dimethacrylate) (pEGDMA), poly(isobornyl acrylate) (pIBA), poly(1H, 1H, 2H, 2H-perfluorodecyl acrylate) (pPFDA)). Not only the polymers, hybrid-type dielectric layer was also developed, by designing new vacuum reactor for continuously depositing ALD and iCVD layer in a one chamber. All dielectric layers developed in this thesis could be utilized as dielectric layers for low-voltage operating, flexible organic TFTs (OTFTs). Together with the wide range of material choice, tunability and scalability of the iCVD process, its aforementioned benefits may open up a new pathway towards fabrication of low-power, high-performance soft electronic devices based on unconventional materials and form factors.
Advisors
Im, Sung Gapresearcher임성갑researcher
Description
한국과학기술원 :생명화학공학과,
Publisher
한국과학기술원
Issue Date
2016
Identifier
325007
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 생명화학공학과, 2016.8,[xiii, 116 p. :]

Keywords

dielectric layer; polymer thin films; initiated chemical vapor deposition (iCVD); atomic layer deposition (ALD); organic thin film transistors (OTFT); flexible electronics; 절연막; 고분자 박막; 개시제를 이용한 화학 기상 증착법; 원자층 증착법; 유기박막트랜지스터; 유연 전자 소자

URI
http://hdl.handle.net/10203/241868
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=669279&flag=dissertation
Appears in Collection
CBE-Theses_Ph.D.(박사논문)
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