Diazoketo-functionalized POSS resists for high performance replica molds of ultraviolet-nanoimprint lithography

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Novel polyhedral oligomeric silsesquioxane (POSS) resists, which are based on a new photo-crosslinking system via Wolff rearrangement, are developed as ideal replica mold materials for ultraviolet-nanoimprint lithography. These POSS resist materials are synthesized by incorporating diazoketo and hydroxyl groups into the POSS core. The resist materials have exhibited a variety of desirable properties as replica molds, such as high modulus, low shrinkage ratio, high transparency, low surface energy, and resistance to organic solvents. The resultant replica molds exhibit a high resolution patterning capacity. These economic fabrication methods of replica molds with high mechanical durability and good releasing properties are potentially useful for versatile applications in the area of mold-based lithography
Publisher
IOP PUBLISHING LTD
Issue Date
2016-11
Language
English
Article Type
Article
Citation

NANOTECHNOLOGY, v.27, no.47

ISSN
0957-4484
DOI
10.1088/0957-4484/27/47/475301
URI
http://hdl.handle.net/10203/241468
Appears in Collection
CH-Journal Papers(저널논문)
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