Thermal Stability and Memory Characteristics of HfON Trapping Layer for Flash Memory Device Applications
We report on the thermal stability and trap characteristics of HfON as a trapping layer in charge trap flash memory device applications. Compared to HfO(2), HfON prepared by NH(3) annealing of HfO(2) exhibits good interfacial quality, excellent memory properties, and superior thermal stability. The improvement in thermal stability can be explained by the lower interfacial reaction and amorphous state of HfON. The activation energy of a SiO(2)/HfON/Al(2)O(3) device and the trap level of the HfON trapping layer were found to be 1.08 and 1.04 eV, respectively.
- Publisher
- ELECTROCHEMICAL SOC INC
- Issue Date
- 2009
- Language
- English
- Article Type
- Article
- Keywords
ELEVATED-TEMPERATURES; CHARGE; SONOS; TECHNOLOGY; RETENTION
- Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.11, pp.H412 - H415
- ISSN
- 1099-0062
- Appears in Collection
- EE-Journal Papers(저널논문)
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