DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Sanghun | ko |
dc.contributor.author | Park, Sungho | ko |
dc.date.accessioned | 2018-03-21T02:56:57Z | - |
dc.date.available | 2018-03-21T02:56:57Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2010-08 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.10, pp.H930 - H933 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240841 | - |
dc.description.abstract | In this paper, we present the impact of the atomic layer deposition of carbon-containing TiN films (TiC-TiN) on the effective work function of metal-oxide-semiconductor devices. By adjusting the deposition temperature of TiC-TiN, the carbon content, which is dependent on the deposition mode, could be altered. Hence, the work function of TiC-TiN as a metal gate material could be tuned. The results revealed that the bonding concentration of Ti-C increases at higher deposition temperatures, whereas the work function of the TiC-TiN metal gate decreases from 5.0 to 4.6 eV. A high work function (5.0 eV) metal gate is suitable for a p-field effect transistor (FET) application and the midgap work function (4.6 eV) is suitable for a fully depleted silicon-on-insulator FET. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3459932] All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | THIN-FILMS | - |
dc.subject | MECHANISM | - |
dc.subject | PEALD | - |
dc.subject | CMOS | - |
dc.subject | ALD | - |
dc.title | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000281306900072 | - |
dc.identifier.scopusid | 2-s2.0-77956202597 | - |
dc.type.rims | ART | - |
dc.citation.volume | 157 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | H930 | - |
dc.citation.endingpage | H933 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.identifier.doi | 10.1149/1.3459932 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Park, Sungho | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | PEALD | - |
dc.subject.keywordPlus | CMOS | - |
dc.subject.keywordPlus | ALD | - |
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