Persistent photoconductivity in Hf-In-Zn-O thin film transistors

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Passivated Hf-In-Zn-O (HIZO) thin film transistors suffer from a negative threshold voltage shift under visible light stress due to persistent photoconductivity (PPC). Ionization of oxygen vacancy sites is identified as the origin of the PPC following observations of its temperature-and wavelength-dependence. This is further corroborated by the photoluminescence spectrum of the HIZO. We also show that the gate voltage can control the decay of PPC in the dark, giving rise to a memory action. (C) 2010 American Institute of Physics. [doi:10.1063/1.3496029]
Publisher
AMER INST PHYSICS
Issue Date
2010-10
Language
English
Article Type
Article
Keywords

AMORPHOUS OXIDE SEMICONDUCTORS; N-TYPE

Citation

APPLIED PHYSICS LETTERS, v.97, no.14

ISSN
0003-6951
DOI
10.1063/1.3496029
URI
http://hdl.handle.net/10203/240837
Appears in Collection
EE-Journal Papers(저널논문)
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