Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility

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Solution-processed TiOx layer was investigated as a candidate for next-generation resistive random access memory (ReRAM) application. TiOx active layer was prepared by simple spin coating process of a titanium(IV) isopropoxide precursor using sol-gel chemistry. Through the introduction of indium-tin-oxide (ITO) coated glass and polyethersulfone (PES) substrates. tranparent and flexible ReRAM devices were demonstrated, respectively. In addition, using scalable via-hole structure with nano-scale active area, the feasibility for high-density memory application was investigated. All ReRAM devices formed using various substrates exhibited good memory performance, such as stable dc I-V, ac endurance, and retention characteristics during maintaining their own unique functions accomplished by substrate properties. (C) 2011 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2011-07
Language
English
Article Type
Article; Proceedings Paper
Keywords

TITANIUM-OXIDE; FILMS

Citation

MICROELECTRONIC ENGINEERING, v.88, no.7, pp.1143 - 1147

ISSN
0167-9317
DOI
10.1016/j.mee.2011.03.054
URI
http://hdl.handle.net/10203/240830
Appears in Collection
EE-Journal Papers(저널논문)
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