DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hur, Ji-Hyun | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2018-03-21T02:52:54Z | - |
dc.date.available | 2018-03-21T02:52:54Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.citation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.5, pp.630 - 634 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240756 | - |
dc.description.abstract | We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using sp3d5s* is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional Schrodinger-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic (I-ON > 100 mu A/mu m) that broken-gap TFETs normally have. | - |
dc.language | English | - |
dc.publisher | IEEK PUBLICATION CENTER | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.title | Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET | - |
dc.type | Article | - |
dc.identifier.wosid | 000393191000012 | - |
dc.identifier.scopusid | 2-s2.0-84994259891 | - |
dc.type.rims | ART | - |
dc.citation.volume | 16 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 630 | - |
dc.citation.endingpage | 634 | - |
dc.citation.publicationname | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.identifier.doi | 10.5573/JSTS.2016.16.5.630 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Hur, Ji-Hyun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Tunneling field effect transistor | - |
dc.subject.keywordAuthor | GaSb | - |
dc.subject.keywordAuthor | InAs | - |
dc.subject.keywordAuthor | nanowire | - |
dc.subject.keywordAuthor | quantum transport | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
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