DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Myung Soo | ko |
dc.contributor.author | Kim, Y. | ko |
dc.contributor.author | Kim, G. | ko |
dc.contributor.author | Lim, Kyung Taek | ko |
dc.contributor.author | Cho, Gyuseong | ko |
dc.contributor.author | Kim, Dongeun | ko |
dc.date.accessioned | 2018-03-21T02:50:51Z | - |
dc.date.available | 2018-03-21T02:50:51Z | - |
dc.date.created | 2018-03-12 | - |
dc.date.created | 2018-03-12 | - |
dc.date.created | 2018-03-12 | - |
dc.date.created | 2018-03-12 | - |
dc.date.issued | 2018-02 | - |
dc.identifier.citation | JOURNAL OF INSTRUMENTATION, v.13, no.2 | - |
dc.identifier.issn | 1748-0221 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240717 | - |
dc.description.abstract | Compared to conventional TFT-based X-ray imaging devices, CMOS-based X-ray imaging sensors are considered next generation because they can be manufactured in very small pixel pitches and can acquire high-speed images. In addition, CMOS-based sensors have the advantage of integration of various functional circuits within the sensor. The image quality can also be improved by the high fill-factor in large pixels. If the size of the subject is small, the size of the pixel must be reduced as a consequence. In addition, the fill factor must be reduced to aggregate various functional circuits within the pixel. In this study, 3T-APS (active pixel sensor) with photodiodes of four different sizes were fabricated and evaluated. It is well known that a larger photodiode leads to improved overall performance. Nonetheless, if the size of the photodiode is > 1000 mu m(2), the degree to which the sensor performance increases as the photodiode size increases, is reduced. As a result, considering the fill factor, pixel-pitch > 32 mu m is not necessary to achieve high-efficiency image quality. In addition, poor image quality is to be expected unless special sensor-design techniques are included for sensors with a pixel pitch of 25 mu m or less. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Photodiode area effect on performance of X-ray CMOS active pixel sensors | - |
dc.type | Article | - |
dc.identifier.wosid | 000425581100002 | - |
dc.identifier.scopusid | 2-s2.0-85043450602 | - |
dc.type.rims | ART | - |
dc.citation.volume | 13 | - |
dc.citation.issue | 2 | - |
dc.citation.publicationname | JOURNAL OF INSTRUMENTATION | - |
dc.identifier.doi | 10.1088/1748-0221/13/02/C02023 | - |
dc.contributor.localauthor | Cho, Gyuseong | - |
dc.contributor.nonIdAuthor | Kim, Y. | - |
dc.contributor.nonIdAuthor | Kim, G. | - |
dc.contributor.nonIdAuthor | Kim, Dongeun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Detector design and construction technologies and materials | - |
dc.subject.keywordAuthor | Inspection with x-rays | - |
dc.subject.keywordAuthor | X-ray radiography and digital radiography (DR) | - |
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