DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Lee, Byung-Hyun | ko |
dc.contributor.author | Lee, Geon-Beom | ko |
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2018-03-21T02:22:43Z | - |
dc.date.available | 2018-03-21T02:22:43Z | - |
dc.date.created | 2018-03-05 | - |
dc.date.created | 2018-03-05 | - |
dc.date.issued | 2018-02 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.10, no.5, pp.4838 - 4843 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240618 | - |
dc.description.abstract | This work investigates localized electrothermal annealing (ETA) with extremely low power consumption. The proposed method utilizes, for the first time, tunneling-current-induced Joule heat in a p-i-n diode, consisting of p-type, intrinsic, and n-type semiconductors. The consumed power used for dopant control is the lowest value ever reported. A metal-oxide semiconductor field-effect transistor (MOSFET) composed of a p-i-n silicon nanowire, which is a substructure of a tunneling FET (TFET), was fabricated and utilized as a test platform to examine the annealing behaviors. A more than 2-fold increase in the on-state (I-ON) current was achieved using the ETA. Simulations are conducted to investigate the location of the hot spot and how its change in heat profile activates the dopants. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000424851600053 | - |
dc.identifier.scopusid | 2-s2.0-85041896486 | - |
dc.type.rims | ART | - |
dc.citation.volume | 10 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 4838 | - |
dc.citation.endingpage | 4843 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.7b17794 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Park, Jun-Young | - |
dc.contributor.nonIdAuthor | Lee, Geon-Beom | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | nanowire | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | dopant activation | - |
dc.subject.keywordAuthor | dopant control | - |
dc.subject.keywordAuthor | Joule heat | - |
dc.subject.keywordAuthor | p-i-n diode | - |
dc.subject.keywordAuthor | heat treatment | - |
dc.subject.keywordAuthor | tunneling field-effect transistor | - |
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