DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Chae Jun | ko |
dc.contributor.author | Lee, HeeSung | ko |
dc.contributor.author | Kim, Seung-Hun | ko |
dc.contributor.author | JANG, TAEHWAN | ko |
dc.contributor.author | Kang, Dong Min | ko |
dc.contributor.author | Son, Hyuk Su | ko |
dc.contributor.author | Byeon, Chul-Woo | ko |
dc.contributor.author | Park, Chul Soon | ko |
dc.date.accessioned | 2018-02-21T05:21:08Z | - |
dc.date.available | 2018-02-21T05:21:08Z | - |
dc.date.created | 2017-11-30 | - |
dc.date.created | 2017-11-30 | - |
dc.date.created | 2017-11-30 | - |
dc.date.issued | 2018-01-15 | - |
dc.identifier.citation | 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), pp.33 - 36 | - |
dc.identifier.uri | http://hdl.handle.net/10203/239999 | - |
dc.description.abstract | This paper presents a 120 GHz low-power down converter in a 65 nm complementary metal-oxide-semiconductor (CMOS) process for chip to chip communication. The center frequency of the down converter is 120 GHz. The proposed down converter consists of an active balun, a down conversion mixer, and a baseband amplifier. The average insertion loss of the active balun was 1 dB within a 3 dB bandwidth. The down conversion mixer achieved a conversion gain of -13 dB with a local oscillator (LO) power of as small as -10 dBm. The peak gain of the baseband amplifier was 28.3 dB with a 3 dB bandwidth of 7.7 GHz. This down converter achieves a high conversion gain of 14.3 dB with an LO power of -10.6 dBm. The proposed down converter consumes 25 mW and has a chip size of 0.89 mm(2). | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.title | A 120 GHz Wideband Low-Power Down Converter for Wireless Chip-to-Chip Communication | - |
dc.type | Conference | - |
dc.identifier.wosid | 000458440200010 | - |
dc.identifier.scopusid | 2-s2.0-85050665611 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 33 | - |
dc.citation.endingpage | 36 | - |
dc.citation.publicationname | 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) | - |
dc.identifier.conferencecountry | US | - |
dc.identifier.conferencelocation | Hyatt Regency Orange County | - |
dc.identifier.doi | 10.1109/SIRF.2018.8304222 | - |
dc.contributor.localauthor | Park, Chul Soon | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.